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MOSFET modeling for circuit analysis and design
Abstract
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.
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Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex
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| eBook | ||
| Monografia | ||
| Descrizione | *MOSFET modeling for circuit analysis and design / Carlos Galup-Montoro, Márcio Cherem Schneider Singapore ; Hackensack, NJ : World Scientific, ©2007 1 online resource (xxiv, 418 pages) : illustrations |
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| Note | Formato pdf/epub Accesso riservato secondo le condizioni contrattuali https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=203859 |
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| ISBN | 9789812707598 | |
| 981270759X | ||
| 9812568107 | ||
| 9789812568106 | ||
| Collana | International series on advances in solid state electronics and technology | |
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| Anno pubblicazione | 2007 | |
| Nota di contenuto | Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension |